 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK3341-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAV *1 PD Tch Tstg Rating 900 10 40 30 10 648 310 +150 -55 to +150 Unit V A A V A mJ W C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=11.9mH, Vcc=90V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total gate charge Gate-Source charge Gete-Drain charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=30V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=10A VGS=10V RGS=10 Vcc=450V ID=10A VGS=10V L=11.9mH Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -dIF/dt=100A/s Tch=25C Min. 900 2.5 Tch=25C Tch=125C Typ. Max. Units V V A mA nA S pF 3.0 3.5 10 500 0.2 1.0 10 100 0.92 1.2 3.5 7 2200 3300 240 360 115 173 28 42 70 105 220 330 90 135 120 180 36 54 40 60 10 1.00 1.50 1.8 21.0 ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.403 50.0 Units C/W C/W 1 2SK3341-01 Characteristics 400 FUJI POWER MOSFET Allowable Power Dissipation PD=f(Tc) Safe operating area ID=f(VDS):Single Pulse,Tc=25C 10 2 350 t= 1s 300 10 250 D.C. 1 10s 100s PD [W] 200 ID [A] 1ms 150 10 100 t D= t T 0 10ms 100ms 50 T 0 0 25 50 75 100 125 150 10 -1 10 1 10 2 10 3 Tc [C] VDS [V] Typical Output Characteristics ID=f(VDS):80s pulse test,Tch=25C 22 20 18 20V 16 14 10V 7V 6.5V 10 Typical Transfer Characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25C ID [A] 12 10 8 6 4 VGS=4.5V 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 VDS [V] 5.0V ID[A] 6.0V 1 5.5V 0.1 0.01 0 1 2 3 4 5 6 7 8 VGS[V] Typical Transconductance gfs=f(ID):80s pulse test,VDS=25V,Tch=25C 3.0 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s pulse test,Tch=25C VGS= 4.5V 2.5 5.0V 5.5V 6.0V 10 2.0 RDS(on) [ ] 6.5V 1.5 7V 10V 20V 1.0 gfs [S] 1 0.5 0.1 0.0 0.1 1 10 0 5 10 15 20 25 ID [A] ID [A] 2 2SK3341-01 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=5A,VGS=10V 4.0 5.0 4.5 3.5 4.0 3.0 3.5 2.5 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. VGS(th) [V] 3.0 2.5 2.0 typ. RDS(on) [ ] 2.0 1.5 max. 1.0 typ. min. 1.5 1.0 0.5 0.5 0.0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 0.0 Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=10A,Tch=25C 25 10 -7 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 20 10 -8 15 Vcc= 180V 450V 720V Ciss VGS [V] C [F] 10 -9 10 Coss 10 5 -10 Crss 0 0 50 100 150 200 250 10 -11 10 -2 10 -1 10 0 10 1 10 2 Qg [C] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 td(off) 10 IF [A] t [ns] 10 2 tf 1 tr td(on) 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 10 1 10 -1 10 0 10 1 VSD [V] ID [A] 3 2SK3341-01 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=90V,I(AV)<=10A 800 FUJI POWER MOSFET Transient Thermal impedance Zth(ch-c)=f(t) parameter:D=t/T 10 0 700 0.5 0.2 0.1 0.05 0.02 10 -2 600 10 Zth(ch-c) [K/W] -1 500 EAV [mJ] 400 0.01 0 t D= T t T 300 200 10 -5 10 100 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 0 0 25 50 75 100 125 150 starting Tch [C] 4 |
Price & Availability of 2SK3341-01
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |